Val Dubin, founder and president of NANO3D SYSTEMS LLC, was awarded the third prize at the Innovation and Entrepreneurship Competition. The weeklong competition took place November 2019 in Hangzhou, Zhejiang province in China. There were a record number of entries for this prestigious competition with over 1600 applicants from various companies around the world, which has doubled from the previous year. Participants were required to have innovative technologies with strong market potential. Winning projects that successfully launch in Hangzhou within one year of the competition will be granted a maximum subsidy of 5 million yuan (over $711,000). They will also enjoy preferential taxes, subsidized housing, matching of funding and loan policies etc. Val Dubin presented, at the competition in Hangzhou, the project titled: “Atomic Layer & Electrochemical Deposition for 2.5D/3D Interconnects and Fine-Pitch Bumping”.
The participants of the competition were engaged in communication with various Innovation and entrepreneurial resources in Hangzhou and other cities in Zhejiang province. Those resources include venture capitalists, well-known enterprises, research institutions and various science & industrial parks. Hangzhou is a paradise-like city with a modern infrastructure, famous for its historical relics, natural scenery, the headquarters of the e-commerce giant Alibaba, and the venue of the 2016 G20 Summit. In order to meet the needs of Hangzhou’s rapid economic development, attract innovative talents and entrepreneurial projects, Hangzhou has established a number of high-tech parks, including international science parks for non-Chinese. To promote the development of high-tech industries, China is also implementing increasingly strict intellectual property protection laws and support for high-tech companies.
“We are very honored to have been awarded 3rd prize at the Grand Final of the Competition. The respective honor came despite stiff competition from companies around the world and we’re proud to have such prestigious distinction. Hangzhou science parks are the ideal place to establish NANO3D’s presence in China, scale up our electrochemical technology, plating materials as well as develop new products with atomic level control such as atomic layer deposition. NANO3D’s high density interconnect (HDI) technology enables higher scalability & density, controlled-expansion, low cost of 2.5D/3D interconnects and fine-pitch bumping in advanced chip packaging applications. China has dominant market share in consumption of HDI plating chemicals of over $2B per year and we are excited to service this market with NANO3D’s innovative technology & products”, said Val Dubin.