Silver-Tungsten Electroless Plating Solution

Packaging

1 liter poly bottle or 5 liter poly Jerrican, meeting UN requirements, unless otherwise specified.

Features and Benefits

• Low resistivity AgW
• Low temperature deposition process (18-40 ^oC)
• Conformal electroless AgW films
• High throwing power
• Selective plating
• Surfaces are uniform and smooth with well-controlled thickness and excellent uniformity

Quality and Deposits Characteristics

• AgW films with ~2.1 at.% of W
• Resistivity of ~4 µOhm cm
• Grain Size of <50 nm
• Corrosion stability in air up to 250 ^oC
• No interdiffusion in Si substrate after 470 ^oC anneal
• Adhesion to dielectric substrates > 65 MPa

General Description

Silver-tungsten (AgW) electroless plating is an electroless AgW process engineered for plating AgW lines, patterns and redistribution layers as well as filling vias and trenches on wide varieties of substrates including semiconductors, glass, polymers et al. This electroless process is suitable for applications in microelectronics and ultralarge-scale integration technology as well as in advanced chip packaging and solar cells. NANO3D’s Electroless AgW can be plated onto sub-5 μm features when used in conjunction with NANO3D’s Photopatternable Catalytic Resist and NANO3D’s Electroless Nickel (Cobalt)Tungsten Phosphorus Plating. The formulation of NANO3D’s Electroless AgW Plating solution provides excellent throwing power.