$17.00 – $34.00
1 quart or 1 gallon natural poly bottles meeting UN requirements, unless otherwise specified
Quality and Deposits Characteristics
Composition of Deposit
99 + % Ni, 1% phosphide
Coeff. Of Expan.
130 x 10-6in/in/oC
Hardness (as plated)
Excellent-flux not required above
500oC in hydrogen or forming gas atmosphere.
Features and Benefits
Stable electroless nickel plating composition, ready to use, specified for making ohmic contacts to silicon and other semiconductor materials. The composition is based upon ions of a nickel complex and hypophosphite together in solution with a catalytic accelerator and a stabilizer. The solution is also buffered at the optimum pH for electroless nickel catalysis. In addition, only high purity chemical materials with trace impurities (such as copper) specifically removed are utilized. NICKELEXTM, is a very stable product, free of ammonia, and ready for use without the need of any addition or mixing. Fume problems are completely eliminated. Sodium and potassium-free solution is also available upon request. NiCKELEXTM, furthermore, is not subject to undesirable changes in composition during use. The chemical reaction during the electroless plating process involves an oxidation-reduction reaction between nickelous and hypophosphite ions. The reaction is essentially a two step process occurring simultaneously.
(1) H2PO2– + H2O = H2OPO3– + H2
(2) Ni ++ (complex) + H2 = Ni + 2H+
The reaction progresses catalytically with nickel deposition occurring at the operating temperature of 95o – 100oC. The nascent hydrogen evolved insures an oxide free nickel deposit.
SPECIFICATION (Rev. 1 020419)
Electroless Nickel Plating Solution
Nickel content – > 21 grams/gallon
pH – 4.8 – 5.2
Sulfate – <0.001%
Alkali metals (sodium, potassium et al) – free formulation is also available upon requests.
SHELF LIFE: This solution has 12 months shelf life.
PACKAGING: 1 quart or 1 gallon natural poly bottles. Larger packages are also available upon request.
PROPERTIES OF NICKELEX SOLUTION:
90 – 98OC
Si, Ge, GaAs, CdS, Ni, Kovar
2000 A/min at 95o C on silicon
USE OF NICKELEX
Nickelex provides good mechanical and electrical contacts for semicodonductor devices (silicon rectifers, solar cells, varactors, microwave diodes, transistors, microcircuits, etc.). The quality of the electrical contact is excellent if the surface of silicon is abraded by lapping to increase surface recombination velocity; if the surface is highly doped from diffusion; or if the semicondcutor resistivity is low (0.1 ohm-cm). Nickelex also produces adherent deposits on germanium, gallium arsenide, and cadmium sulfide.
The Nickelex plate exhibits excellent solderability with lead, tin, and Pb/Sn alloys. Flux can be omitted when furnaced soldered in a hydrogen or non-oxidizing atmosphere.
Complete metallization procedures are provided for silicon rectifier and planar device fabrication. These procedures should be followed to obtain optimum adhesion of nickel and quality of the ohmic contacts.