Nickel Ohmic Contact Electroless Plating Solution

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SKU: ELN-EL4-100P-02 Category: .

Product Details

Description

Packaging

1 quart or 1 gallon natural poly bottles meeting UN requirements, unless otherwise specified

Quality and Deposits Characteristics

Composition of Deposit

99 + % Ni, 1% phosphide

M.P.

890oC

Sp. Gr.

7.85

Coeff. Of Expan.

130 x 10-6in/in/oC

Reflectivity

65%

Elect. Conductivity

60 micro-ohm-cm

Thermal conductivity

0.01 cal/cm2/cm/oC/sec

Hardness (as plated)

500 vickers

Solderability

Excellent-flux not required above

500oC in hydrogen or forming gas atmosphere.

Features and Benefits

  • Stable, ready to use
  • Plates without generating ammonia fumes
  • Produces quality electrical contacts on p- and n-type silicon
  • Does not compensate for p- or n- type conductivity
  • Excellent adhesion and solderability
  • Plates on silicon, germanium, gallium arsenide, cadmium sulfide

General Description

Stable electroless nickel plating composition, ready to use, specified for making ohmic contacts to silicon and other semiconductor materials. The composition is based upon ions of a nickel complex and hypophosphite together in solution with a catalytic accelerator and a stabilizer. The solution is also buffered at the optimum pH for electroless nickel catalysis. In addition, only high purity chemical materials with trace impurities (such as copper) specifically removed are utilized. NICKELEXTM, is a very stable product, free of ammonia, and ready for use without the need of any addition or mixing. Fume problems are completely eliminated. Sodium and potassium-free solution is also available upon request. NiCKELEXTM, furthermore, is not subject to undesirable changes in composition during use. The chemical reaction during the electroless plating process involves an oxidation-reduction reaction between nickelous and hypophosphite ions. The reaction is essentially a two step process occurring simultaneously.

(1) H2PO2 + H2O   =   H2OPO3 + H2

(2) Ni ++ (complex) + H2 = Ni + 2H+

The reaction progresses catalytically with nickel deposition occurring at the operating temperature of 95o – 100oC. The nascent hydrogen evolved insures an oxide free nickel deposit.

Safety & Documentation

Safety Information

Download Safety Data SheetContact NANO3D SYSTEMS LLC for Certificate of Analysis.

SPECIFICATION (Rev. 1 020419)

ELN-EL4-100P-02

Electroless Nickel Plating Solution

PLATING FORMULA:          

                  Nickel content                                –                       > 21 grams/gallon

                        pH                                         –                                   4.8 – 5.2

                   Sulfate                                       –                                  <0.001%

Alkali metals (sodium, potassium et al) – free formulation is also available upon requests.

SHELF LIFE:    This solution has 12 months shelf life.

PACKAGING: 1 quart or 1 gallon natural poly bottles. Larger packages are also available upon request.     

Additional Information

PROPERTIES OF NICKELEX SOLUTION:

Appearance

 

Green Solution

pH

 

5

pH control

 

None needed

Operating Temperature

 

90 – 98OC

Platable Materials

 

Si, Ge, GaAs, CdS, Ni, Kovar

Plating Capacity

 

1400 in2/micron/Gal.

Deposition Rate

 

2000 A/min at 95o C on silicon

Shelf Life

 

6 months

Storage

 

Room Temperature

USE OF NICKELEX

Nickelex provides good mechanical and electrical contacts for semicodonductor devices (silicon rectifers, solar cells, varactors, microwave diodes, transistors, microcircuits, etc.). The quality of the electrical contact is excellent if the surface of silicon is abraded by lapping to increase surface recombination velocity; if the surface is highly doped from diffusion; or if the semicondcutor resistivity is low (0.1 ohm-cm). Nickelex also produces adherent deposits on germanium, gallium arsenide, and cadmium sulfide.

The Nickelex plate exhibits excellent solderability with lead, tin, and Pb/Sn alloys. Flux can be omitted when furnaced soldered in a hydrogen or non-oxidizing atmosphere.

INSTRUCTIONS
Complete metallization procedures are provided for silicon rectifier and planar device fabrication. These procedures should be followed to obtain optimum adhesion of nickel and quality of the ohmic contacts.