Conformal Cobalt Barrier Electroless Plating Solution

Packaging

1 liter or 1 gallon poly bottles, meeting UN requirements, unless otherwise specified.

Quality and Deposits Characteristics

• Conformality up to 95%
• Corrosion resistant
• Amorphous CoWP barrier crystallization temperature > 350 oC
• No interdiffusion in CoWP/Cu layers at 350 oC for 60 min
• CoW(>2%)P(>12%)
• Roughness of 1 nm to 15 nm for 45 nm to 200 nm CoWP films
• Thickness continuity < 10 nm
• Adhesion to dielectric substrates and other metals > 65 MPa

Features and Benefits

• Conformal electroless CoWP films
• High throwing power
• Selective plating
• Surfaces are uniform and smooth with well-controlled thickness and excellent uniformity
• Diffusion barrier
• Adhesion layer
• Plateable barrier
• Qualified bath metrology to replenish and maintain electroless CoWP plating bath

General description

Electroless Cobalt-Tungsten-Phosphorus Platingis is an electroless cobalt process engineered for plating cobalt patterns and redistribution layers as well as filling vias and trenches on wide varieties of substrates including semiconductors, glass, polymers et al. NANO3D’s Electroless Cobalt Tungsten Phosphorus Plating process can be plated onto sub-5 μm features when used in conjunction with NANO3D’s Photopatternable Catalytic Resist. The blend of elements in NANO3D’s Electroless Cobalt Tungsten Phosphorus Plating solution prevents crystallization, provides a diffusion barrier & adhesion layer between substrates and other metals.