Cobalt-Tungsten-Boron-Phosphorous Electroless Plating Solution

Packaging

1 liter or 1 gallon poly bottles, meeting UN requirements, unless otherwise specified.

Quality and Deposits Characteristics

• Conformality up to 95%
• Corrosion resistant
• Amorphous CoWBP barrier crystallization temperature > 350 oC
• No interdiffusion in CoWBP/Cu layers at 350 oC for 60 min
• CoW(>2%)B(>4%)P(>12%)
• Roughness of <15 nm for ~200 nm CoWBP films
• Thickness continuity < 10 nm
• Adhesion to dielectric substrates and metals > 65 MPa

Features and Benefits

• Alkali metals (Na, K) – free plating solution
• Activation-free plating on copper and other metals
• Conformal electroless CoWBP films
• High throwing power
• Selective plating
• Surfaces are uniform and smooth with well-controlled thickness and excellent uniformity
• EM capping layer for copper metallization
• Diffusion barrier for copper and oxygen
• Adhesion layer
• Plateable barrier

General description

Electroless Cobalt-Tungsten-Boron-Phosphorus Platingis is an electroless cobalt process engineered for plating CoWBP selectively on copper lines to improve the electromigration resistance as well as filling vias and trenches on wide varieties of substrates including semiconductors, glass, polymers et al. NANO3D’s Electroless Cobalt-Tungsten-Boron-Phosphorus Plating process can be selectively plated onto sub-20 nm copper lines as well as sub-5 μm features when used in conjunction with NANO3D’s Photopatternable Catalytic Resist. The blend of elements in NANO3D’s Electroless Cobalt-Tungsten-Boron-Phosphorus Plating solution prevents crystallization, provides a diffusion barrier & adhesion layer between substrates and other metals.