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$125.77 – $217.08
500 ml and 1 liter poly bottles, meeting UN requirements, unless otherwise specified.
Accelerator plating additive is formulated to be used in copper plating solutions for high speed plating of copper bumps, pads, patterns and redistribution layers as well as void-free filling of vias and trenches on wide varieties of substrates including semiconductors, glass, polymers et al. Accelerator enhances bottom-up fill in recessed features (vias and trenches), eliminates dendrite formation and reduces grain sizes & surface roughness during high speed & bright copper plating. NANO3D’s Copper Electroplating process operates in wide range of current densities and provides excellent throwing power, improved levelling characteristics, and ductile low stress deposits. NANO3D copper electroplating processes produces bright copper deposits and smooth surface.
Download Safety Data Sheet. Contact NANO3D SYSTEMS LLC for Certificate of Analysis.
COMPOSITION:
| SPECIFICATION | TEST method |
ASSAY |
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AA1 | 3.1 ± 0.3 a.u. | HPLC |
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Cu | 0.5 ± 0.05 g/L | Spectrophotometry |
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METALS |
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Al (Aluminum) | < 1 ppm | GFAA/ICPOES |
Au (Au) | < 1 ppm | GFAA/ICPOES |
As (Arsenic) | < 1 ppm | GFAA/ICPOES |
Ag (Silver) | < 1 ppm | GFAA/ICPOES |
Ca (Calcium) | < 1 ppm | GFAA/ICPOES |
Cd (Cadmium) | < 1 ppm | GFAA/ICPOES |
Co (Cobalt) | < 1 ppm | GFAA/ICPOES |
Cr (Chromium) | < 1 ppm | GFAA/ICPOES |
Fe (Iron) | < 1 ppm | GFAA/ICPOES |
In (Indium) | < 1 ppm | GFAA/ICPOES |
Mg (Magnesium) | < 1 ppm | GFAA/ICPOES |
Mn (Manganese) | < 1 ppm | GFAA/ICPOES |
Ni (Nickel) | < 1 ppm | GFAA/ICPOES |
Pb (Lead) | < 1 ppm | GFAA/ICPOES |
Sn (Tin) | < 1 ppm | GFAA/ICPOES |
Tl (Thallium) | < 1 ppm | GFAA/ICPOES |
Zn (Zinc) | < 1 ppm | GFAA/ICPOES |
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Particles |
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(> 0.25 mm) | ≤ 200 counts/ml | Laser Particle Counter |
SHELF LIFE: 12 months
PACKAGING: 500 ml and 1 liter polyethylene bottles. Other packages are available upon request
Accelerator accumulated at the bottom of recessed features (trenches and vias) according to curvature enhanced accelerator coverage (CEAC) mechanism with which a bottom-up filling behavior can be achieved in blind-via holes & trenches, eliminates dendrites formation and decreases the grain sizes & surface roughness of copper deposits.
