Packaging

1 liter poly bottle, 1 gallon or 5 gallon pail, meeting UN requirements, unless otherwise specified.

Quality and Deposits Characteristics

• Density of 8.9 g/cm3
• Electrical resistivity of 1.7 – 1.8 µΩ cm
• High in-film purity (<10 ppm for N, S, C, Cl)
• Low surface roughness, RMS < 10 nm @ 1 µm thick Cu
• Planarization of trenches (no recess in 1 µm wide x 0.5 µm deep trenches with 0.8 µm thick Cu)
• Strong (111) texture with small (220) and (200)
• Reflectivity > 75%
• Elongation of 19 – 32%

Features and Benefits

• The use of single electroplating solution containing plating additives
• Stable additives with large process window
• High purity electrolyte and long shelf life
• High cloud point (> 80 C) and low foaming
• Low surface tension plating bath (~44 dyne/cm @ 25 C)
• High speed plating (>4 µm/min)
• Uniform and flat bumps, pads, patterns and redistributions layers
• Void free filling of vias and trenches

General description

High Speed Bright Copper Electroplating Solution is an electrolytic acid copper process engineered for plating copper bumps, pillars, pads, patterns and redistribution layers as well as filling vias and trenches on wide varieties of substrates including semiconductors, glass, polymers et al. NANO3D’s High Speed Copper Electroplating process operates in wide range of current densities and provides excellent throwing power, improved levelling characteristics, and ductile low stress deposits. NANO3D copper electroplating processes produces bright copper deposits and smooth surface. NANO3D’s copper electroplating solution is made up of cupric sulphate and sulphuric acid with small additions of hydrochloric acid and organic additives. NANO3D’s organic additives have wide concentration process window eliminating the need in separate additive solutions and replenishment for about 120 Amp-hours of electroplating.