Leveler Plating Additive

Packaging

500 ml and 1 liter poly bottles, meeting UN requirements, unless otherwise specified.

Quality and Characteristics

• High planarization with no detectable recess on 1 – 10 µm wide x 0.5 – 2 µm deep trenches plated with 0.7 – 2 µm thick copper
• Smooth plated copper surface with RMS </=10 nm  for 1 µm thick copper and RMS < 25 nm for ~ 20 µm thick copper films
• Highly uniform (111) textures and minimal (200) and (220) textures at different plating rate of copper films and patterns
• High suppression strength plating additive
• Qualified bath metrology for replenishment 

Features and Benefits

• Act as leveler and suppressor in copper electroplating solution
• Stable additive with large process window
• High purity and long shelf life

General description

Leveler plating additive is formulated to be used in copper electroplating solutions for high speed plating of copper bumps, pads, patterns and redistribution layers as well as void-free filling of vias and trenches on wide varieties of substrates including semiconductors, glass, polymers et al. Leveler enhances bottom-up fill and planarize the surface of plated copper in recessed features (vias and trenches) and eliminates dendrites formation during high speed plating. NANO3D’s Copper Electroplating process operates in wide range of current densities and provides excellent throwing power, improved leveling characteristics, and ductile low stress deposits. NANO3D copper electroplating processes produces bright copper deposits and smooth surface. Void-free fill of sub-20nm features with strong suppression strength additives (suppressor and leveler) with complete planarization and higher (111) texture to increase reliability and decrease defects (<10) for on-chip metallization.